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Silicon-germanium Heterojunction Bipolar Transistors John D. Cressler
Silicon-germanium Heterojunction Bipolar Transistors
John D. Cressler
A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications. It covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe.
588 pages, black & white illustrations
| Mídia | Livros Hardcover Book (Livro com lombada e capa dura) |
| Lançado | 31 de janeiro de 2003 |
| Data do lançamento original | 2002 |
| ISBN13 | 9781580533614 |
| Editoras | Artech House Publishers |
| Páginas | 588 |
| Dimensões | 167 × 237 × 39 mm · 1,04 kg |
| Idioma | Inglês |