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Photo-induced Defects in Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering Redfield, David (Stanford University, California)
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Photo-induced Defects in Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering
Redfield, David (Stanford University, California)
This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices.
240 pages, 106 b/w illus.
| Mídia | Livros Hardcover Book (Livro com lombada e capa dura) |
| Lançado | 26 de janeiro de 1996 |
| ISBN13 | 9780521461962 |
| Editoras | Cambridge University Press |
| Páginas | 230 |
| Dimensões | 159 × 237 × 22 mm · 494 g |
| Idioma | Inglês |